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VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
FEATURES
* High voltage * Industrial standard package * Thick copper baseplate * UL E78996 approved * 3500 VRMS isolating voltage * Totally lead (Pb)-free * Designed and qualified for industrial level
ADD-A-PAKTM
RoHS
COMPLIANT
BENEFITS PRODUCT SUMMARY
IT(AV) or IF(AV) 75/95 A
* Up to 1600 V * Fully compatible TO-240AA * High surge capability * Easy mounting on heatsink * Al203 DBC insulator * Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2 t I2t VRRM TStg TJ Range CHARACTERISTICS 85 C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VSK.71 75 165 1665 1740 13.86 12.56 138.6 400 to 1600 - 40 to 125 VSK.91 95 210 1785 1870 15.91 14.52 159.1 kA2s kA2s V C A UNITS
Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.71, .91..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.71/.91 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 C mA
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) IO(RMS) t = 10 ms t = 8.3 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) www.vishay.com 2 I2t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL TEST CONDITIONS 180 conduction, half sine wave, TC = 85 C VSK.71 VSK.91 UNITS
75
95
I(RMS)
or
I(RMS)
165 1665 1740 1400 1470 1850 1940 13.86 12.56 9.80 8.96 17.11 15.60 138.6 0.82 0.85 3.00 2.90 1.59 150 250 400
210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 1.58 kA2s V m V A/s kA2s
No voltage reapplied 100 % VRRM reapplied
Sinusoidal half wave, initial TJ = TJ maximum
TJ = 25 C no voltage reapplied No voltage reapplied 100 % VRRM reapplied
Initial TJ = TJ maximum
TJ = 25 C, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied TJ = TJ maximum Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ maximum TJ = TJ maximum TJ = 25 C
TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 C, anode supply = 6 V, resistive load
(3) (4)
mA
16.7 % x x IAV < I < x IAV I > x IAV Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 75/95 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 C VGT TJ = 25 C TJ = 125 C TJ = - 40 C Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger IGT VGD IGD TJ = 25 C TJ = 125 C TJ = 125 C, rated VDRM applied TJ = 125 C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VSK.71 VSK.91 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt (1) TEST CONDITIONS TJ = 125 C, gate open circuit 50 Hz, circuit to base, all terminals shorted TJ = 125 C, linear to 0.67 VDRM VSK.71 VSK.91 UNITS 15 2500 (1 min) 3500 (1 s) 500 mA V V/s
Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT91/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Junction operating and storage emperature range Maximum internal thermal resistance, junction to case per module Typical thermal resistance, case to heatsink to heatsink Mounting torque 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VSK.71 VSK.91 - 40 to 125 0.165 0.1 5 Nm 3 110 4 TO-240AA g oz. 0.135 UNITS C
K/W
R CONDUCTION PER JUNCTION
DEVICES VSK.71 VSK.91 SINE HALF WAVE CONDUCTION 180 0.06 0.04 120 0.07 0.05 90 0.09 0.06 60 0.12 0.08 30 0.18 0.12 180 0.04 0.03 RECTANGULAR WAVE CONDUCTION 120 0.08 0.05 90 0.10 0.06 60 0.13 0.08 30 0.18 0.12 UNITS C/W
Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
Maximum Average On-state Power Loss (W) 140 120 100 80 RMS Limit 60
Conduction Period
Maximum Allowable Case T emperature (C)
130 120 110
Cond uction Angle
VSK.71.. S eries RthJC (DC) = 0.33 K/ W
DC 180 120 90 60 30
100 90 80 70 0 10 20 30 40 50 60 70 80 Average On-state Current (A)
30
60
40 20 0 0 20 40 60 80 100 120 Average On-state Current (A) VSK.71.. S eries Per Junction TJ = 125C
90
120 180
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case T emperature (C)
VSK.71.. S eries R thJC (DC) = 0.33 K/ W
Peak Half S Wave On-state Current (A) ine
130 120 110
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
At Any Ra ted Loa d Condition And With Rated VRRM App lied Following S e. urg Initial TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s
Cond uction Period
100 90 30 80 70 0 20 40 60 80 100 120 Average On-state Current (A) 60 90 120
180
DC
VSK.71.. Series Per Junc tion
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
Peak Half S Wave On-state Current (A) ine
120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 Average On-state Current (A) 180 120 90 60 30 RMS Limit
1800 1600 1400 1200 1000 800
Maximum Non Rep etitive S e Current urg Versus Pulse T rain Duration. Control Of Conduc tion May Not Be Ma intained . Initial T = 125C J No Volta ge Reap plied Ra ted V RRMReap p lied
Conduction Angle
VSK.71.. S eries Per Junction TJ = 125C
VSK.71.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1
600 0.01
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94421 Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 75/95 A
250 Maximum T otal On-s te Power Lo ss (W) ta 180 120 90 60 30
A S R th
2 0. W K/
3 0.
200
=
W K/
0. 4
0. 5
0. /W 1K
K/ W
150
K/ W 0.7 K/ W
ta el -D R
100
Conduction Angle
1K /W
1.5 K/ W
50
VSK.71.. Series Per Mod ule TJ = 125C 0 20 40 60
3 K/ W
0 80 100 120 140 160 180 0
20
40
60
80
100
120
140
T otal RMSOutp ut Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 7 - On-State Power Loss Characteristics
600 Maximum T otal Power Loss (W) 500 400 300 200 100 0 0 20 40 60 0 80 100 120 140 160 180 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) 2 x VSK.71.. S eries S ingle Phase B ridge Connected T J = 125C
180 (S ine) 180 (R t) ec
Rt
0. 2
0. 3
0.5 K/ W
1 K/ W
2 K/ W
Fig. 8 - On-State Power Loss Characteristics
A hS
K/ W
K/ W
= 1 0. W K/ lt a e -D R
800 Maximum T otal Power L (W) oss 700
R
600 500 400 300 200 100 0 0 40 80 120 160 200 240 0 3 x VSK.71.. S eries T hree Pha se Brid ge Connected TJ = 125C 120 (R ect)
SA th
=
0. 1
0. 2
K/ W
K/ W
-D el ta
0.3 K/ W
0.5 K/ W
1 K/ W
R
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.71, .91..PbF Series
Vishay High Power Products
Maximum Allowable Cas T e emperature (C)
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
Maximum Average On-state Power Loss (W) 180 160 140 120 100 RMS Limit 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Average On-state Current (A)
Conduction Period
130 120 110
VSK.91.. S eries RthJC (DC) = 0.27 K/ W
DC 180 120 90 60 30
Cond uc tion Angle
100 90 80 70 0 20 40 60 80 100 Average On-state Current (A)
30
60 90 120 180
VSK.91.. S eries Per Junc tion TJ = 125C
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
Maximum Allowable Cas T e emperature (C)
VSK.91.. S eries R thJC (DC) = 0.27 K/ W
Peak Half S Wave On-state Current (A) ine
130 120 110
1600 1500 1400 1300 1200 1100 1000 900 800 700 1
At Any Rated Loa d Condition And With Rated V RRM Applied Following S e. urg Initial T = 125C J
@60 Hz 0.0083 s @50 Hz 0.0100 s
Conduc tion Period
100 90 80 70 0 20 40 60 80 100 120 140 160 Average On-state Current (A)
30 60 90 120
180
DC
VSK.91.. S eries Per Junction 10 100
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Avera ge On-sta te P ower Loss (W)
Peak Half S ine Wave On-s tate Current (A)
140 120 100 80 60
Conduc tio n Angle
1800 1600 1400 1200 1000 800
180 120 90 60 30 RMS Limit
Ma ximum Non Repetitive S e Current urg Versus Pulse T rain Duration. Control Of Cond uc tion Ma y Not Be Ma intained . Initial TJ= 125C No Voltage R eap p lied Ra ted VRRM R eap p lied
40 20 0 0 20 40 60 80 100 Average On-state Current (A) VSK.91.. S eries Per Junction TJ = 125C
VSK.91.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1
600 0.01
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
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Document Number: 94421 Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 75/95 A
350
Maximum T otal On-state Power Loss (W)
R th
300
250 200
180 120 90 60 30
SA
0. 2
0. 3
K/ W
= 1 0. W K/
K/ W
e lt -D a
150
100 50 0 0
Conduc tion Angle
VSK.91.. S eries Per Mod ule TJ = 125C 40 80 120 160 200
0. 5K /W 0.7 K/ W 1K /W 1.5 K /W
R
3KW /
0 240
20
40
60
80
100
120
140
T otal RMSOutp ut Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 16 - On-State Power Loss Characteristics
600 Maximum T otal Power Loss (W) 500 400 300 200 100 0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Amb ient T emperature (C) 2 x VSK.91.. Series S ingle Phase B ridge Connected T J = 125C
180 (S ine) 180 (R ect)
Rt
A hS
= 1 0. W K/
0. 2
K/ W
ta el -D
0. 3K /W
R
0.5 K/ W
1K / W
2 K/ W
Fig. 17 - On-State Power Loss Characteristics
900 Maximum T otal Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 240 280 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) 3 x VSK.91.. S eries T hree Pha s B ge e rid Connected TJ = 125C 120 (Rect)
0. 2K /W
0.3 K/ W
R
A S th
=
0. 1
K/ W
-D el ta
R
0.5 K/ W
1 K/ W
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
Maximum R everse R overy Cha rge - Qrr (C) ec 700 600 500
50 A
1000 Instantaneous On-state Current (A)
VSK.71.. S eries VSK.91.. S eries TJ = 125 C
IT = 200 A M 100 A
100
400 300 200 100 10
20 A
TJ= 25C 10 TJ= 125C VSK.71.. S eries Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4
10 A
20
30
40
50
60
70
80
90 100
Instantaneous On-s tate Voltage (V)
Rate Of Fall Of On-state Current - di/ dt (A/ s )
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Recovery Charge Characteristics
1000 Instantaneous On-state Current (A)
Maximum R everse R covery Current - Irr (A) e
140 120 100 80 60 40 20 10 VSK.71.. S eries VSK.91.. S eries TJ = 125 C
I T = 200 A M 100 A 50 A 20 A 10 A
100
TJ= 25C 10 TJ= 125C
VSK.91.. S eries Per Junction 1 0.5 1 1.5 2 2.5 3 3.5
20
30
40
50
60
70
80
90 100
Instantaneous On-state Voltage (V)
R ate Of Fall Of F orward Current - di/ dt (A/ s )
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Recovery Current Characteristics
T ransient T hermal Impedanc e Z thJC (K/W)
1 S teady S tate Value: RthJC = 0.33 K/ W RthJC = 0.27 K/ W (DC Operation) 0.1 VSK.71.. S eries VSK.91.. S eries
Per Junction
0.01 0.001
0.01
0.1 S quare Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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Document Number: 94421 Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 75/95 A
100 Instantaneous Gate Voltage (V)
R ectangular gate pulse a)Recommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/ dt: 15 V, 40 ohms 10 tr = 1 s, tp >= 6 s
(1) PGM (2) PGM (3) PGM (4) PGM (a)
T = -40 C J
= 200 W, tp = 300 s = 60 W, tp = 1 ms = 30 W, tp = 2 ms = 12 W, tp = 5 ms
(b)
T = 25 C J T = 125 C J
1
(4)
(3) (2)
(1)
VGD
IGD
VSK.71../ .91.. Series 0.1 1
Frequenc y Limited by PG(AV) 10 100 1000
0.1 0.001
0.01
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 6 -
T
2
91
3
/
16
4
S90
5
P
6
Module type Circuit configuration (see end of datasheet) Current code (1) Voltage code (see Voltage Ratings Table) dV/dt code: S90 = dV/dt 1000 V/s No letter = dV/dt 500 V/s P = Lead (Pb)-free with no auxiliary cathode
(1) Available
(for details see dimensions - link at the end of datasheet) To specify change: 71 to 72 91 to 92 e.g.: VSKT92/16P etc.
Note * To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94421 Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.71, .91..PbF Series
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKT (1) ~ VSKH (1) ~ VSKL (1) ~ VSKN (1) -
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
1
1
1
1
2
+ (2)
2
+ (2)
2
+ (2)
2
+ (2)
3
45 76 45
3
3
76 45
3
(3) G1 K1 K2 G2 (4) (5) (7) (6)
(3) G1 K1 (4) (5)
(3) K2 G2 (7) (6)
+ (3) G1 K1 (4) (5)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95085
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Document Number: 94421 Revision: 24-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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